基于C-SOI工艺的一维MEMS电容式超声传感器阵列  

One-dimensional MEMS capacitive ultrasonic transducer arrays based on C-SOI technology

作　　者：李玉平[1,2] 何常德[1,2] 张娟婷 张慧[1] 宋金龙[1] 薛晨阳[1,2] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051 [2]中北大学电子测试技术国防科技重点实验室,山西太原030051

出　　处：《传感器与微系统》2015年第3期94-96,102,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(61127008)

摘　　要：提出了一种新的基于C-SOI工艺制备的电容式微加工超声传感器(CMUT)的方法。通过对加工过程中一些关键工艺步骤进行测试,发现所加工的微传感器尺寸与设计尺寸基本一致,且刻蚀的空腔高度均匀,键合效果良好,证明了工艺流程的可行性。此外,通过对所加工的传感器阵列进行测试发现,各阵元谐振频率和静态电容具有良好的一致性,说明以C-SOI工艺加工的CMUT器件满足设计要求,且适宜加工大阵列,这种加工技术使得加工成像阵列成为可能。Propose a new processing method based on cavity-in-SOI（ C-SOI） technology to fabricate capacitive micromachined ultrasonic transducer（ CMUT）. Key technical steps used in fabricating process are tested,it shows that the size of fabricated sensor is basically in accordance with the designed value,and cavities are uniform in height and the wafer bonding has obtained good effects,thus prove feasibility of process flow. Furthermore,it show that resonant frequency and static capacitance has good uniformity by testing on the designed array,which indicates that the CMUT devices based on C-SOI technology meet design requirements and are suitable for processing large arrays,and make it possible to process imaging array.

关 键 词：电容式微加工超声传感器 C-SOI工艺 ANSYS 成像阵列 一致性 

分 类 号：TN55[电子电信]