超浅结亚45nm MOSFET亚阈值区二维电势模型  

A 2-D Potential Sub-Threshold Model for Sub-45nm MOSFETs with Ultra Shallow Junctions

作　　者：韩名君[1,2] 柯导明[1] 

机构地区：[1]安徽大学电子信息工程学院,安徽合肥230601 [2]安徽工程大学电气工程学院,安徽芜湖241000

出　　处：《电子学报》2015年第1期94-98,共5页Acta Electronica Sinica

基　　金：国家自然科学基金(No.61076086;No.06070458);高等学校博士学科点专项科研基金(No.2103401110008)

摘　　要：文章提出将亚阈值区超浅结MOSFET的氧化层和Si衬底划分为三个区域,得到三个区域的定解问题,并用特征函数展开法求出了因边界衔接条件而产生的未知系数,首次得到超浅结亚45nm MOSFET的二维电势半解析模型,并给出了亚阈值电流模型.通过与Medici模拟结果对比发现该模型能够准确模拟亚阈值下的超浅结15~45nm MOSFET的二维电势和电流.Three definite-solutions problems,w hich are divided from the oxide layer and Si substrate for ultra shallow junctions M OSFETs,are presented. A 2-D potential analytical model for the Sub-45 nm M OSFETs w ith ultra shallow junctions,w hich the unknow ns can be solved by the eigenfunctions expansion from the connected condition identity,is derived.The sub-threshold current model is also presented. According to the comparison w ith M EDICI,the model can accurately simulate the sub-threshold 2-D potential and current of USJs 15-45 nm M OSFETs.

关 键 词：超浅结亚45nm MOSFET 二维电势半解析模型 亚阈值电流 

分 类 号：TN386.1[电子电信—物理电子学]