基于MEMS开关的射频衰减器的设计制作  

Design and Fabrication of RF Attenuators Based on MEMS Switches

作　　者：贾志浩[1,2] 段俊萍[1,2] 王伟[1,2] 毛静[1,2] 崔建利[1,2] 赵龙[1,2] 王明焕[1,2] 张斌珍[1,2] 

机构地区：[1]中北大学电子测试技术重点实验室,太原030051 [2]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《微纳电子技术》2015年第3期162-166,203,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61401405;51475438);山西省基础研究项目(2014011021-4);新世纪优秀人才支持计划资助项目(130951862)

摘　　要：提出了一种基于微机电系统(MEMS)开关的射频衰减器的设计方案。首先在DC^20 GHz内,以10 dB衰减量为目标,对整体电路结构进行设计,选择以共面波导(CPW)为传输线,接触式MEMS开关作为控制器件,同时以开关中的电容作为断路时的平衡器件进行电路匹配;然后按所需衰减量计算T型网络中各个电阻大小;按照计算值,在CST微波工作室中建模仿真得到工艺加工需要的尺寸;最后结合UV-LIGA工艺对衰减器进行了样片试制并对其性能进行了测试。测试结果显示,在DC^20 GHz内,目标衰减量为10 dB时,最大偏差可以控制在2 dB之内。结果表明,以MEMS开关为基础的衰减器,可以在宽频带内实现更加稳定的衰减。A design scheme of RF attenuators based on micro-electromechanical system （MEMS） switches was put forward. Firstly, the circuit was designed with the attenuation of 10 dB in the band of DC- 20 GHz. The coplanar waveguide （CPW） was chosen as a transmission line, and the MEMS series switches as control components. Besides the switch capacitance was designed as a balanced component to match the circuit when it was disconnected. Then each resistance in the T network was calculated according to the required attenuation. After that, the structure model was built and simulated by CST Microwave Studio based on the calculated data, determining the size needed in the fabrication process. Finally, LIGA process and its performance was tested. the sample of the attenuator was made with UV- The test results show that the maximum deviation can be controlled within 2 dB in the band of DC- 20 GHz with an expected attenuation of 10 dB. It turns out that the attenuator based on MEMS switches can realize more stable attenuation within the broadband.

关 键 词：MEMS开关 共面波导(CPW) 射频衰减器 UV-LIGA 宽频带 

分 类 号：TH703[机械工程—仪器科学与技术] TN631[机械工程—精密仪器及机械]