基于数字模拟的PECVD沉积氮化硅薄膜的工艺参数决策方法研究  

Optimizing Plasma-Enhanced Chemical-Vapor-Deposition Conditions for SiN_x: H Coatings via Numerical Simulation

作　　者：吴晓松[1] 李玉鹏[1] 褚学宁[1] 

机构地区：[1]上海交通大学机械与动力工程学院,上海20040

出　　处：《真空科学与技术学报》2015年第3期281-289,共9页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(51075261;51205242;71301104);高等学校博士学科点专项科研基金资助课题(20120073110096;20133120120002);上海市科技创新行动计划项目(11DZ1120800;12DZ1125600)

摘　　要：提出了基于数字模拟的等离子体增强化学气相沉积(PECVD)沉积氮化硅薄膜的工艺参数决策方法。氮化硅薄膜的主要影响因子和质量特性参数通过领域知识和专家意见先期获得,通过单因素物理试验获得工艺参数和质量特性参数之间的关系,通过数字模拟的正交试验获得最佳的工艺参数。考虑到PECVD沉积氮化硅薄膜实验所需的时间和费用,基于数字模拟的PECVD沉积氮化硅薄膜的工艺参数决策方法可以在数据离散化、领域知识不充分的环境中高效经济地进行工艺参数的优化选择。A novel decision-making technique, via numerical simulation, was developed to optimize the growth condi- tions of the SiNx ：H coatings synthesized on industrial scale by plasma enhanced chemical vapor deposition （PECVD）, in a situation where its growth mechanism is not fully understood and experimental results are far from being sufficient. In the newly-developed technique, first, the impact of the major growth variables on the micmstmctures and properties of the films was evaluated by specialists and by literature searching. Second, the dependence of the properties, such as the depo- sition rate, refraction index,minority-carrier lifetime and uniformity,on a specific growth variable was investigated with a single-factor experiment. Finally, the growth variables, including but not limited to the substrate temperature, ratio of NH_3/ SiH_4 flow rates, total gases flow rate and pressure, were optimized by orthogonal experiment design;and its outputs were e-valuated with the well-designed numerical simulation.

关 键 词：氮化硅薄膜 等离子体增强化学气相沉积 工艺参数优化 正交实验 数字模拟 

分 类 号：TQ153.1[化学工程—电化学工业] TP391.7[自动化与计算机技术—计算机应用技术]