用于光子计数的InGaAs/InP SPAD设计  

Design and characterization of InGaAs/InP single-photon avalanche diodes for photon counting

作　　者：纪应军 石柱[1] 覃文治[1] 代千[1] 冯万鹏[1] 胡俊杰[1] 

机构地区：[1]西南技术物理研究所,四川成都610041

出　　处：《红外与激光工程》2015年第3期934-940,共7页Infrared and Laser Engineering

摘　　要：重点研究了InGaAs/InP SPAD的隧道贯穿电场、雪崩击穿电场、雪崩宽度与过偏电压的关系,提出了过偏电压的计算方法。分析了InGaAs/InP SPAD的基本特性即探测效率、暗计数率与其过偏电压、工作温度、量子效率、电场分布的依赖关系,提出了一种单光子InGaAs雪崩二极管的设计方法。设计制作了InGaAs/InP SPAD,并在门控淬灭模式下进行了单光子探测实验。结果表明:对于准200μm的SPAD,在过偏2 V、温度-40℃条件下,探测效率(PDE)>20%(1 550 nm)、暗计数率(DCR)准20 k Hz;对于准50μm的SPAD,在过偏2.5 V、温度-40℃条件下,探测效率(PDE)>23%(1 550 nm)、暗计数率(DCR)2 k Hz。最后对实验结果进行了分析和讨论。The tunneling breakdown electric field, avalanche breakdown electric field, multiplication region width depend on exceed breakdown voltage of InGaAs/InP SPAD was researched as a key point. The calculated method of exceed breakdown voltage was presented. The basic performance of single photon avalanche diode（SPAD） depends on their excess bias, multiplication region width, working temperature,electric-field distribution and quantum efficiency has been analyzed. According to these analysis, a designed solution of InGaAs/InP SPAD has been presented, and then the device was manufactured later. Under the conditions of-40 ℃ and exceed breakdown voltage over 2 V, the InGaAs/InP SPAD of 准200 μm diameter exhibits dark count rates（DCR） below 20 k Hz and photon detection efficiency（PDE） of 20%（1 500 nm）.Under the conditions of-40 ℃ and exceed breakdown voltage over 2.5 V, the InGaAs/InP SPAD of 准50 μm diameter exhibits dark count rates（DCR）below 2 k Hz and photon detection efficiency（PDE） of 23%（1 550 nm）.Finally, the experimental results were analyzed.

关 键 词：InGaAs/InP单光子雪崩二极管 雪崩宽度 工作温度 电场分布 

分 类 号：TN36[电子电信—物理电子学]