热屏位置影响直拉单晶硅熔体和固液界面的模拟  

Simulation on Effect of Heat Shield Position on the Melt and Solid Liquid Interface Cz Silicon

作　　者：关小军[1,2] 张向宇[1,2] 潘忠奔[2] 王进[1,2] 曾庆凯[3] 

机构地区：[1]山东大学材料科学与工程学院,济南250061 [2]山东大学晶体材料国家重点实验室,济南250100 [3]山东交通学院航空学院,济南250357

出　　处：《人工晶体学报》2015年第2期329-336,共8页Journal of Synthetic Crystals

基　　金：山东大学晶体材料国家重点实验室开放课题(KF1303)

摘　　要：为了研究热屏位置对于直拉单晶硅的熔体和固液界面的影响,采用CGSim有限元软件对200 mm直拉单晶硅生长过程进行了模拟,结果表明,随着热屏底端位置上升(或径向内移),熔体自由表面及其邻近区域的温度下降;随着热屏底端位置径向内移,位于两个大涡胞之间的较小涡胞强度增大且移向熔体液面深处;热屏位置上升或径向外移均会使固液界面上凸程度增大,这主要归因于晶体热场的相应变化。In order to investigate the effects of heat shield position on the melt and interface during Cz Si growth, the process for growing φ200 mm silicon single crystal ingots were simulated by a finite element software CGSim. The results show that with the distance between heat shield and melt increasing （or the distance between heat shield and crystal decreasing ）, the temperature of melt free surface and its adjacent area gets lower, meanwhile, the clockwise vortex becomes stronger and moves downward. As the heat shield rising up or moving far away from crystal, the convex degree of solid liquid crystal interface inereases, which is attributed to the corresponding changes of crystal temperature field.

关 键 词：直拉单晶硅 有限元 热屏位置 流场 温场 固液界面 

分 类 号：O77[理学—晶体学]