Ar对微波等离子体CVD单晶金刚石生长的影响  

Effect of Argon Addition on Single Crystal Diamond Synthesized by Microwave Plasma CVD

作　　者：林晓棋 满卫东[1] 吕继磊[2] 张玮[1,2] 江南[2] 

机构地区：[1]武汉工程大学湖北省等离子体化学与新材料重点实验室,武汉430073 [2]中国科学院宁波材料技术与工程研究所,宁波315201

出　　处：《人工晶体学报》2015年第2期337-341,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11175137)

摘　　要：采用自主研发的5 k W不锈钢谐振腔式MPCVD设备,在Ar/H2/CH4气氛下,保持总气压与CH4气流量不变,研究了不同Ar/H2比例对单晶金刚石生长速度和晶体质量的影响。通过拉曼光谱与高分辨率XRD摇摆曲线,从生长速度与生长质量两点对所得样品进行分析。结果表明,适量Ar的存在能够显著提高单晶金刚石的生长速度,并且不损害金刚石的晶体质量。当Ar/H2=30%时,生长速度最高,为35μm/h。随着Ar/H2比例的进一步增加,单晶金刚石的结晶质量会有所下降,Ar/H2比例过高则会严重破坏单晶金刚石的生长。Single crystal diamond was grown by 6 kW stainless steel resonant cavity type MPCVD with Ar/ H_2/CH_4 gas mixture, keep the total pressure and Ar flow constant, the effect of Ar/H_2 ratio on the growth rate and crystal quality of single crystal diamond were studied by Raman spectroscopy and XRD rocking curve. The results show that the growth rate of single crystal diamond increases and the crystal quality hasn t been damaged with proper Ar addition. The maximum growth rate of single crystal diamond is 35 μm/h when Ar/H_2 ratio is 30%. With the amount of Ar addition increasing, the quality of single crystal changed worse, and a very high ratio of Ar/H_2 will heavily damage the growth process of single crystal diamond.

关 键 词：MPCVD 单晶金刚石 AR 

分 类 号：O78[理学—晶体学]