Ar气流量对磁控溅射制备微晶硅薄膜微观结构及光/电学性能的影响  

Influence of Ar Flow Rates on the Microstructure and Optical / Electrical Properties of μc-Si Thin Films Prepared by Magnetron Sputtering

作　　者：乔泳彭[1] 蒋百灵[1] 

机构地区：[1]西安理工大学材料科学与工程学院,西安710048

出　　处：《人工晶体学报》2015年第2期361-367,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51272158)

摘　　要：采用射频磁控溅射法在不同Ar气流量条件下制备了多组微晶硅薄膜,研究了Ar气流量对薄膜微观结构及光/电学性能的影响。结果表明:当Ar气流量的较小时,微晶硅薄膜的沉积速率较高,薄膜的晶化率、晶粒尺寸以及粗糙度处于较好的生长态势。同时,薄膜的光学性能发生明显变化,对于长波长范围内薄膜的光学透过率随Ar气流量的增大逐渐下降。薄膜的电学性能表现为随Ar气流量的增大,少子寿命呈现出先增大后大幅降低的变化趋势。A series of μc-Si films with different flow rates of Ar were prepared by radio frequency magnetron sputtering method, the influence of Ar flow rates on the micro-structure and the optical/ electrical properties of the film were analyzed. The result shows that the sample reach a high growing rate under a low level of Ar gas flow rate. Not only the grain size and crystallization rate but the membrane micro-surface roughness also show a better growing situation. Meanwhile, the optical properties of the films show significantly change and the visible light transmittance decreased during the long wavelength range. The minority carrier lifetime of the films present a trend of rises firstly and then diminishes obviously as the Ar flow rates increasing.

关 键 词：射频磁控溅射 Ar气流量 微晶硅薄膜 

分 类 号：TM914.4[电气工程—电力电子与电力传动]