高效率X射线光刻在单级光栅研制中的应用  

Application of the High-Efficient X-Ray Lithography in the Fabrication of Single-Order Gratings

作　　者：施百龄 董连和[1] 朱效立[2] 谢常青[2] 曹磊峰[3] 况龙钰[3] 刘慎业[3] 

机构地区：[1]长春理工大学光电工程学院,长春130022 [2]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029 [3]中国工程物理研究院激光聚变研究中心高温高密度等离子体物理国家重点实验室,四川绵阳621900

出　　处：《微纳电子技术》2015年第4期246-250,共5页Micronanoelectronic Technology

基　　金：国家重大科学仪器开发专项资助项目(2012YQ13012504)

摘　　要：为了满足单级衍射光栅的应用需求,在器件研制中对X射线光刻的关键技术进行优化,克服了曝光中图形畸变的问题,并利用同步辐射光源对单级衍射光栅进行了高效率的批量复制。通过对X射线光谱成分进行模拟,在X射线束线中插入铬反射镜和氮化硅滤片,得到了能量范围为0.5~2 keV的大面积均匀光斑;根据具体情况对掩模图形进行+5^+35 nm的校正,克服了X射线曝光图形扩展的问题;通过控制掩模与基片软接触产生的莫尔条纹,使曝光间隙降到3μm以下,保证了稳定的曝光结果与高分辨率;所制备的多种单级衍射光栅图形结构复杂,具有纳米尺度特征线宽,剖面陡直,满足单级衍射光栅设计对纳米加工技术的苛刻要求。In order to meet the application requirement of the single-order diffraction grating,key technologies of the X-ray lithography in the process of the device development were optimized,the problem of the graphic distortion in the exposure process was overcome,the single-order diffraction gratings were replicated efficiently and abundantly with the synchronous radiation light source.Through the simulation of components of X-ray spectra,the large area uniform light spot with the energy range of 0.5-2 keV was achieved by inserting of the Cr reflecting mirror and silicon nitride filter in the X-ray beam line.According to the specific situation,the mask pattern dimension was corrected from ＋5 nm to ＋35 nm,and the problem of the X-ray exposure graphics extension was resolved.By controlling the Moire fringes produced by the soft contact of the mask and substrate to reduce the exposure gap less than 3μm,the stable exposure result and high-resolution were ensured.The various fabricated single-order diffraction gratings have the complex graphic structures,nano critical dimensions and steep cross sections,which meets the strict requirement of single-order diffraction grating design in the nano fabrication technology.

关 键 词：X射线光刻 单级衍射光栅 光谱优化 掩模校正 曝光间隙控制 

分 类 号：TN305.7[电子电信—物理电子学]