TC4钛合金上制备c轴取向AlN薄膜研究  

Study on Preparation of c-axis Orientation AlN Film Deposited on TC4 Titanium Alloy

作　　者：王瑜[1] 彭斌[1] 李川[1] 张万里[1] 刘兴钊[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2015年第2期280-282,共3页Piezoelectrics & Acoustooptics

基　　金：自然科学基金资助项目(61223002);四川省青年科技创新团队基金资助项目(2011HTD0006)

摘　　要：采用中频磁控反应溅射,提出了在TC4钛合金基片上制备c轴取向AlN薄膜的两步法工艺。利用扫描电镜分析(SEM)、X线衍射(XRD)、原子力显微镜(AFM)对薄膜的表面及断面形貌、晶体结构、表面粗糙度进行了表征。研究结果表明,利用该文提出的两步法工艺可在TC4钛合金衬底上制备出表面粗糙度为2.3nm、c轴XRD摇摆曲线半高宽为4.1°的AlN薄膜,满足制作压电微机电系统(MEMS)器件或薄膜声表面波(SAW)和体声波器件的需求。A two-step deposition process had been used to deposit c-axis oriented AlN film on TC4 titanium alloy substrates by mid-frequency magnetron sputtering.The surface and cross-section morphologies,crystal structure and surface roughness of the AlN films were characterized by scanning electron microscopy（SEM）,X-ray diffractometry（XRD）and atomic force microscope（AFM）.The results show that the full width at half maximum of the X-ray diffraction rocking curves around c-axis and surface roughness of the AlN films are 4.1°and 2.3nm respectively,which are prepared on the TC4 titanium alloy substrates with the proposed two step deposition process.The prepared AlN films can be used to fabricate piezoelectric MEMS devices,film surface acoustic wave devices and bulk acoustic wave devices.

关 键 词：TC4钛合金 中频磁控反应溅射 两步法 ALN薄膜 声表面波(SAW)器件 

分 类 号：TN384[电子电信—物理电子学]