CMP承载器背压发展历程  

The Developed History on the Back Pressure Distribution of CMP Carrier

作　　者：李伟[1] 周国安[1] 徐存良[1] 詹阳[1] 

机构地区：[1]中国电子科技集团公司第四十五研究所,北京100176

出　　处：《电子工业专用设备》2015年第3期22-25,共4页Equipment for Electronic Products Manufacturing

摘　　要：随着集成电路(IC)技术节点越来越严苛,对晶圆的局部和全局平整度提出了越来越高的要求,化学机械抛光技术(CMP)是满足晶圆表面形貌的关键技术。承载器是C MP设备的关键部件,通过研究历代承载器的背压施加方式和区域压力控制方式对晶圆表面全局平整度的影响,发现随着技术节点的提高,承载器施加越来越多路背压且背压控制精度越来越高。因此,国产CMP设备为了满足集成电路的严格要求,其承载器必须具备施加多区域背压,且控制精度越来越高。With the ICtechnology nodes m ore and m ore stringent,local and global planarization of the wafer put forw ard higher request,C hem ical mechanical polishing （CMP） is a practical technology andcoretechnologytorealizethelocalandglobalwaferplanarization.Thecarrierisakeycomponent of CMPequipment,research on the history of carrier back pressure w ay and regional pressure control methods effects on the surface of the wafer global flatness, found thatas the technology node increase,the carrier is im posing more and m ore regions back pressures and higher accurate back pressure control. Therefore,the domestic CMPequipment in order to meet the strict requirements of the integrated circuit, the carrier must have applied multi-zone back pressure, and the control accuracy is more and more high.

关 键 词：化学机械平坦化 背压 多区域控制 承载器 保持环 

分 类 号：TN305.2[电子电信—物理电子学]