980nm垂直腔面发射激光器的外延生长  

Epitaxial Growth of 980nm Vertical Cavity Surface Emitting Laser

作　　者：崔明[1] 韩军[1] 邓军[1] 李建军[1] 邢艳辉[1] 陈翔[1] 朱启发[1] 

机构地区：[1]北京工业大学光电子技术省部共建教育部重点实验室,北京100124

出　　处：《半导体光电》2015年第1期38-41,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61204011);国家自然科学基金项目(61107026);北京市教委基金项目(KM201210005004);北京市自然科学基金项目(4112006)

摘　　要：模拟了垂直腔面发射激光器(VCSEL)的反射谱和量子阱增益谱,采用金属有机物化学气相沉积设备外延生长了980nm的垂直腔面发射激光器,制作了氧化孔径为14μm的内腔式氧化限制型VCSEL器件,其阈值电流为3.3mA,阈值电压为1.8V,斜率效率为0.387W/A,室温直流电流为22.8mA时,输出光功率为5mW。In this paper, simulated were the reflectance spectrum and the quantum well gain of vertical cavity surface emitting lasers （VCSEL）. And high quality epitaxial wafers of 980 nm VCSEL were grown by metal-organic chemical vapor deposition （MOCVD）. A kind of intracavity oxide restricted VCSEL device with the oxide aperture of 14 μm was fabricated in later process. The indexes of the device are obtained as. the threshold current of 3.3 mA, the threshold voltage of 1.8 V, the slope efficiency of 0. 387 W/A, and the output optical power of 5 mW under DC 22.8 mA at room temperature.

关 键 词：量子阱 金属有机物化学气相沉积 氧化限制型 

分 类 号：TN248.4[电子电信—物理电子学]