Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs  

作　　者：雷志锋 郭红霞 曾畅 陈辉 王远声 张战刚 

机构地区：[1]Key Laboratory of Low Dimensional Materials & Application Technology of Ministry of Education, Xiangtan University [2]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute [3]Northwest Institute of Nuclear Technology

出　　处：《Chinese Physics B》2015年第5期433-437,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.61204112)

摘　　要：AlGaN/GaN high electron mobility transistors （HEMTs） were irradiated by 256 MeV 127I ions with a fluence up to 1 × 10^10 ions/cm2 at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Both the drain current ld and the gate current Ig increased in off-state during irradiation. Post-irradiation measurement results show that the device output, transfer, and gate characteristics changed significantly. The saturation drain current, reverse gate leakage current, and the gate-lag all increased dramatically. By photo emission microscopy, electroluminescence hot spots were found in the gate area. All of the parameters were retested after one day and after one week, and no obvious annealing effect was observed under a temperature of 300 K. Further analysis demonstrates that swift heavy ions produced latent tracks along the ion trajectories through the hetero-junction. Radiation-induced defects in the latent tracks decreased the charges in the two-dimensional electron gas and reduced the carrier mobility, degrading device performance.AlGaN/GaN high electron mobility transistors （HEMTs） were irradiated by 256 MeV 127I ions with a fluence up to 1 × 10^10 ions/cm2 at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Both the drain current ld and the gate current Ig increased in off-state during irradiation. Post-irradiation measurement results show that the device output, transfer, and gate characteristics changed significantly. The saturation drain current, reverse gate leakage current, and the gate-lag all increased dramatically. By photo emission microscopy, electroluminescence hot spots were found in the gate area. All of the parameters were retested after one day and after one week, and no obvious annealing effect was observed under a temperature of 300 K. Further analysis demonstrates that swift heavy ions produced latent tracks along the ion trajectories through the hetero-junction. Radiation-induced defects in the latent tracks decreased the charges in the two-dimensional electron gas and reduced the carrier mobility, degrading device performance.

关 键 词：GAN HEMTS IRRADIATION heavy ions 

分 类 号：O571.6[理学—粒子物理与原子核物理]