应力诱发的电迁移失效分析  

Stress Induced Electromigration Failure Analysis

作　　者：陈选龙 石高明[2] 蔡伟[1] 邝贤军[1] 

机构地区：[1]工业和信息化部电子第五研究所,广东广州510610 [2]工业和信息化部电子第五研究所华东分所,江苏苏州215011

出　　处：《电子产品可靠性与环境试验》2015年第2期39-43,共5页Electronic Product Reliability and Environmental Testing

摘　　要：电迁移是半导体器件常见的失效机理,可以导致金属的桥连或者产生空洞,引起短路或者开路等互连失效。总结了两种典型的电迁移失效模式:热电迁移和电化学迁移,阐述了两种电迁移的失效应力诱发条件,以及失效分析方法。通过失效分析案例研究,加深对两种失效机理的认识并提供电迁移失效分析的基本思路。Electromigration is a universal failure mechanicsm in semiconductor devices, which might cause metal hridge or voids, resulting in short or open circuit. The paper has summarized two typical failure mode of eleetromigration, mainly containing thermal electromigration and elet＇trochemical migration. Condition of stress induced failure and failure analysis methodare described. Failure case study for electromigration will be covered to provide a greater understanding of failure machanisms and analysis methods.

关 键 词：热电迁移 电化学迁移 失效机理 电阻 铝金属化 集成电路 互连 

分 类 号：TN303[电子电信—物理电子学]