铁电存储场效应晶体管I-V特性的物理机制模拟  

Simulation of Physical Mechanism for I-V Characteristics of Ferroelectric Nonvolatile Memory Field Effect Transistor

作　　者：周志刚[1] 王耘波[1] 于军[1] 谢基凡[1] 徐静平[1] 刘刚[1] 王华[1] 朱丽丽[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《微电子学》2002年第2期109-112,共4页Microelectronics

基　　金：国家自然科学基金资助项目 (6 97710 2 4 );武汉市晨光青年科技计划项目

摘　　要：文章讨论的模型主要描述了铁电存储场效应晶体管 ( FEMFET)的 I- V特性。从理论结果可反映出几何尺寸效应和材料参数对晶体管电特性的影响。传统的阈值电压的概念己不再适用 ,由于铁电层反偏偶极子的开关作用 ,自发极化的增加对存储器的工作状态产生很小的影响。该模型可用于设计和工艺参数的优化 。I V characteristics of ferroelectric nonvolatile memory field effect transistor are described by the model presented in the paper The theoretical results provide a unique insight into the effects of geometrical and material parameters on the electrical properties of the transistor The conventional concept of threshold voltage is no longer applicable, and the increase of the spontaneous polarization has only minor impact on memory operation due to reverse dipole switching of the ferroelectric layer The application of the model to optimization of design and process parameters is illustrated with a virtual prototyping example

关 键 词：铁电存储 场效应晶体管 FEMFET I-V特性 极化 直观原型 

分 类 号：TN386[电子电信—物理电子学] TN384