溅射功率对ZnO∶Mn薄膜结构、应力和光电性能的影响  

Effect of the Sputtering Power on the Structure,Stress and the Photoelectric Property of ZnO ∶ Mn Films

作　　者：臧永丽[1] 刘景伦[2] 

机构地区：[1]山东理工大学理学院,山东淄博255049 [2]菏泽学院物理与电子工程系,山东菏泽274015

出　　处：《菏泽学院学报》2015年第2期37-39,共3页Journal of Heze University

摘　　要：利用直流磁控溅射法,在玻璃衬底上制备掺锰氧化锌(Zn O∶Mn)透明导电薄膜.研究了溅射功率对薄膜结构、力学性能和光电性能的影响.功率对薄膜应力影响不是很大,且应力均为负值,表现为压应力.溅射功率通过改变晶粒尺寸和结晶程度而影响薄膜的导电性能:当溅射功率为135 W时,薄膜的电阻率具有最小值为1.10×10-2Ω·cm.实验表明,功率是影响Zn O∶Mn薄膜性能的一个重要参量.Transparent conductive ZnO ∶Mn thin films were prepared on water -cooled glass substrate by DC magnetron sputtering.After studying the influence of sputtering power on the structure,mechanical and photoelec-tric property,it is showed that power stress is negative to be compressive stress and has no great influence on the films.The conductive property of sputtering power is shown by changing the grain size and crystallinity：the lowest resistivity of 1 .10 ×10 ^-2Ω·cm is obtained when the sputtering power is 135W.The experimental results show that the sputtering power is an important parameter for the property of the films.

关 键 词：ZnO∶Mn 薄膜 透明导电薄膜 磁控溅射 溅射功率 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055