n型补偿直拉单晶硅的电子迁移率  

Electron Mobility in n-type Compensated Czochralski Silicon Crystal

作　　者：易俊[1] 陈鹏[1] 马向阳[1] 杨德仁[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2015年第1期5-8,4,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(60906001);国家科技重大专项资助项目(2010ZX02301-003)

摘　　要：通过霍尔效应测量、二次离子质谱等手段研究了n型硼-磷补偿直拉单晶硅的电子迁移率与掺杂浓度的关系。通过比较迁移率的实验测量值和由Klaassen迁移率模型得到的计算值,发现Klaassen模型适用于掺杂浓度在1018cm-3数量级的补偿单晶硅电子迁移率的计算,但对掺杂浓度在1017cm-3数量级的补偿单晶硅而言则明显高估了电子迁移率。分析认为这是由于该模型未充分考虑低掺杂浓度情形下自由载流子对电离杂质的屏蔽作用由于杂质补偿受到的削弱效应。根据实验结果,修正了Klaassen模型,使之在低掺杂浓度的情况下获得的电子迁移率计算值也与实验值吻合得相当好。We investigated the dependence of electron mobility in n-type phosphorus-boron compensated Czochralski （CZ） silicon crystal on phosphorus concentration by means of Hall effect measurement and second ion mass spectroscopy. Through comparing the measured electron mobility with the calculated one based on Klaassen model, it is found that Klaassen model is appropriate for the calculation of electron mobility in compensated CZ silicon with a doping level of the order of 10^18cm^-3 , but it overestimates with a doping level of the order of 10^17cm^-3. It is believed that klaassen model has not substantially taken into account the weakening effect of compensation on the screening of ionized impurity by free carriers in the case of light-doping. According to the experimental result, Klaassen model has been modified so that its calculated electron mobility values accord well with the measured ones.

关 键 词：电子迁移率 补偿 硅 

分 类 号：O472.4[理学—半导体物理]