一种高冲击MEMS加速度传感器的仿真与优化  

Research on Simulation and Optimization of a High-g MEMS Accelerometer

作　　者：侯帅[1] 张振海[1] 林然[1] 张东红 李科杰[1] 柳新宇 张亮[1] 李治清[1] 李剑[1] 许涛[1] 何昫 史秀峰[1] 

机构地区：[1]北京理工大学机电学院,北京100081 [2]合肥市新星应用技术研究所,合肥230031

出　　处：《计算机测量与控制》2015年第5期1831-1834,共4页Computer Measurement &Control

基　　金：国防基础科研项目(C××2011××03;A××2011××05;A××2013××10);国家自然科学基金面上项目(61273346);教育部博士点基金(20121101120009);北京理工大学"优青资助计划"项目(2012YG0203);基础研究基金项目(2014CX02031和2015CX×××××)

摘　　要：基于高冲击MEMS加速度传感器的冲击灵敏度、频率响应与敏感芯片的结构尺寸存在相互制约关系,提出在满足传感器结构强度和固有频率条件下,提高传感器冲击灵敏度的理论分析、仿真模拟与实验验证的方法;运用ANSYS软件对敏感芯片的弹性膜片厚度与中心岛厚度进行多次设计与仿真,通过多组仿真数据对传感器的结构尺寸进行优化;高冲击实验验证表明,优化的传感器结构尺寸、性能指标能够满足设计要求,冲击灵敏度较高。Since the structure size of the concerned sensor chip is mutually restricted with the performance of high--g MEMS accelerome- ter, such as the sensitivity and frequency, under the condition of the required strength and natural frequency of the sensor chip, try to im- prove the sensor sensitivity through size optimization, thus to improve the comprehensive performance of the sensor. After many times simu- lation of the diaphragm thickness and the central proof mass of the sense chip using the ANSYS software, the model size of the sensor chip is optimized according to groups of simulation data. It is verified by high--g experiments that the optimized sensor can satisfy the experimental requirement, and has high sensitivity.

关 键 词：高冲击 加速度传感器 MEMS 有限元 尺寸优化 

分 类 号：TN302[电子电信—物理电子学]