HiPak 6.5kV IGBT的开关特性及门极驱动电路对其影响  

Switching Characteristic of HiPak 6.5kV IGBT and the Influence of Gate Unit

作　　者：Makan Chen Raffael Schnell Evgeny Tsyplakov Arnost Kopta Joerg Berner 洪鹏 王浩 Sven Klaka 

机构地区：[1]ABB瑞士有限公司半导体部 [2]ABB中国有限公司半导体部,北京100015

出　　处：《大功率变流技术》2015年第2期30-34,共5页HIGH POWER CONVERTER TECHNOLOGY

摘　　要：介绍了ABB对Hi Pak 6500V/750A IGBT模块反向恢复特性的研究,首创性地就di/dt对二极管和与之反向并联的IGBT的正、反向恢复特性的影响进行了研究;并分析了di/dt对IGBT模块的影响,可以确认di/dt在其反向恢复过程中起重要作用,即当di/dt过高时,IGBT和二极管芯片会发生损坏,并有可能随后导致变流器的桥臂间短路。文章指出IGBT和门极驱动之间的优化匹配对确保安全工作十分重要,只有这样Hi Pak模块的鲁棒性才能得以完全体现。It presented the investigation on the reverse recovery of ABB HiPak 6 500 W750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the impact on IGBT module was analyzed. It is confirmed that di/dt plays a critical role in the reverse recovery process, where damage can occur both to IGBT and diode chips at excessive di/dt, leading to possible subsequent short circuit failure between phase-legs of the converter. The importance of an optimised match between IGBT and gate driver to ensure safe operation and full exploitation of HiPak robustness is highlighted.

关 键 词：6 500 V IGBT SPT+ 反向恢复 门板驱动 DI/DT 峰值功率 二类短路 

分 类 号：TN32[电子电信—物理电子学]