原子层沉积HfO_2薄膜的激光损伤特性分析  

Laser induced damage properties for HfO2thin films deposited by atomic layer deposition

作　　者：卫耀伟[1] 王震[1] 潘峰[1] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《强激光与粒子束》2015年第5期103-107,共5页High Power Laser and Particle Beams

基　　金：国家科技重大专项基金项目(2013ZX04006011-102-001);中国工程物理研究院科学技术发展基金项目(2013B0401066)

摘　　要：以目前激光惯性约束聚变中应用最广泛的高折射率材料二氧化铪(HfO2)为研究对象,在熔石英基底上分别采用TEMAH和HfCl4前驱体制备了HfO2薄膜,沉积温度分别为100,200和300℃。采用椭偏仪和激光量热计对薄膜的光学性能进行了测量分析,采用X射线衍射仪(XRD)对薄膜的微结构进行了测量。最后在小口径激光阈值测量平台上按照1-on-1测量模式对薄膜的损伤阈值进行了测试,并采用扫描电子显微镜(SEM)对损伤形貌进行了分析。研究表明,用同一种前驱体源时,随着沉积温度升高,薄膜折射率增加,吸收增多,损伤阈值降低。在相同温度下,采用有机源制备的薄膜更容易在薄膜内部形成有机残留,导致薄膜吸收增加,损伤阈值降低。采用HfCl4作为前驱体源在100℃制备氧化铪薄膜时,损伤阈值能够达到31.8J/cm2(1064nm,3ns)。In this paper, ALD was used to deposit HfOz single layer films with organic and inorganic precursors at 100, 200 and 300 ℃, respectively. Optical properties such as film absorption, refractive index and microstructure were investigated. Espe- cially, laser damage properties as a key property for thin films used as laser system components were analyzed using 1-on-1 meas- urement method. Laser damage morphologies were analyzed by scan electron microscope （SEM）. For the HfOz thin films deposi- ted with different process parameters, the damage was mainly caused by film absorption and crystallization. When the HfC14 pre- cursor was used at 100 ℃, HfO2 films had the least absorption and the best LIDT （about 31.8 J/cm2 , 1064 nm, 3 ns）, which was the best result as reported.

关 键 词：惯性约束聚变 强激光系统 原子层沉积 激光损伤阈值 HFO2薄膜 

分 类 号：O484.4[理学—固体物理]