非制冷型InAsSb光探测器在8～9μm波长的性能提高  

Performance enhancement of uncooled InAsSb photodetectors at wavelength of 8～9μm

作　　者：高玉竹[1] 龚秀英[1] 李继军[2] 吴广会 冯彦斌[2] Takamitsu Makino Hirofumi Kan 

机构地区：[1]同济大学电子与信息工程学院,上海201804 [2]陕西华星电子工业公司,陕西西安712099 [3]Hamamatsu Photonics K. K. , 5000 Hirakuchi, Hamakita 434-8601 ,Japan

出　　处：《光电子．激光》2015年第5期825-828,共4页Journal of Optoelectronics·Laser

基　　金：军工项目;中央高校基本科研业务费资助项目

摘　　要：研究提高非制冷型铟砷锑（InAsSb）光子探测器在8~9μm波长的灵敏度。用熔体外延（ME）技术在砷化铟（InAs）衬底上生长了长波长InAsSb厚外延膜,外延层厚达到50μm。X-射线衍射（XRD）谱测量表明,外延层为高质量单晶。电子探针微分析（EPMA）组份分布图像显示,Sb在外延层中的分布比较均匀。用该材料制作了光导探测器,在探测器上安装了锗（Ge）浸没透镜。非制冷条件下,器件的光谱响应证明,InAs0.06Sb0.94探测器在波长8.0μm及9.0μm处的探测率D＊分别为1.30×109 cm·Hz1/2·W-1及0.28×109 cm·Hz1/2·W-1,比InAs0.02Sb0.98探测器提高了1个数量级,这是由于InAs0.06Sb0.94材料中As组份的增加引起的。而在波长6.5μm处,InAs0.06Sb0.94和InAs0.02Sb0.98的峰值探测率D＊λp均达大于1.00×109 cm·Hz1/2·W-1,可应用在红外探测和成像领域。The improvement of sensitivity for uncooled InAsSb photodetectors with the wavelength longer than 8/lm is studied. InAsSb thick epilayers with long wavelength were grown on InAs substrates by melt epitaxy （ME） technique. The thickness of the epilayers reaches 50 /lm X-ray diffraction （XRD） spectra show that the epilayers are single crystals with high quality. Electron probe rnicroanalysis （EP- MA） composition distribution images exhibit that the distribution of Sb in the epilayers is fairly homoge- neous. The photoconductors were fabricated using the materials, and Ge immersion lenses were set on the detectors. Under uncooled condition,the spectral photoresponses of the devices demonstrate that the de- tectivity of InAso.06Sbo.94 detectors is 1.3 X109 cm · Hz1/2 · W-1 and 2.8X108 cm · Hz1/2A· W-1 at the wavelengths of 8 μm and 9 μm , respectively, which is improved by one order of magnitude compared with that of InAso. o2 Sbo. 98 detectors. This is due to the increasing of arsenic composition in InAso. o6 Sbo. 94 materials. The peak detectivities at the wavelength of 6.5μm of InAs0. o6 Sbo. 94 and InAso. o2 Sbo. 98 are higher than 1.0 X 109 cm ·Hz1/2· W-1 ,indicating the possible applications for infrared （IR） detec- tion and imaging.

关 键 词：INASSB 非制冷型光子探测器 光谱响应 探测率 

分 类 号：O612.5[理学—无机化学]