一种新的解析提取RF SOI MOS变容管衬底模型参数的方法  

A New Method to Analytically Extract the Substrate Model Parameters for SOI MOS Varactors

作　　者：沈国荣 陈小川[2] 刘军[2] 

机构地区：[1]上海集成电路技术与产业促进中心,上海201203 [2]中国科学院上海高等研究院,上海201210

出　　处：《中国集成电路》2015年第6期59-64,共6页China lntegrated Circuit

摘　　要：本文提出一种适用于RF SOI工艺MOS变容管行为表征的新模型。提出的模型考虑了SOI衬底的物理特性,并给出了解析提取衬底寄生网络模型参数的方法。采用提出的模型,精确预见了RF SOI MOS变容管器件特性,测量和模型仿真结果,在20 GHz频率范围内得到很好的吻合。A novel compact model for RF SOl MOS varactor characterization is presented. The model is constructed based on the physics of SOI substrate. A method to analytically extract the substrate network model parameters is proposed. The model predicts the performance of a RF SOI MOS varactor accurately. MOS varactor RF model based on SOI technology is proposed. The measured and model simulated results show excellent agreements up to 20 GHz.

关 键 词：MOS变容管 衬底模型 解析提取 

分 类 号：TN386[电子电信—物理电子学]