Epitaxial growth and thermostabiUty of cubic and hexagonal SrMnO3 films on SrTiO3（111）  

作　　者：Rui-Nan Song Min-Hui Hu Xiang-Rong Chen Jian-Dong Guo 

机构地区：[1]Institute of Atomic and Molecular Physics, College of Physical Science and Technology, Sichuan University, Chengdu 610065, China [2]Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [3]Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China [4]Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

出　　处：《Frontiers of physics》2015年第3期83-88,共6页物理学前沿（英文版）

基　　金：Acknowledgements This work was supported by the National Basic Research Program of Ministry of Science and Technology of China （Grant No. 2012CB921700）, the National Natural Science Foundation of China （Grant No. 11225422）, and the Strategic Priority Research Program （B） of CAS （Grant No. XDB07010100）.

摘　　要：The growth of SrMnO3 films on SrTiO3（111） substrates by pulsed laser deposition was studied and found to produce cubic and hexagonal （4H） structures in the SrMnO3 films. By adjusting the substrate temperature and oxygen pressure, the stability of the two phases was fine-tuned, resulting in the growth of cubic-SrMnO3（lll） or 4H-SrMn03（0001） film, with the 4H phase being the more stable at room temperature and ambient pressure in the bulk form. The growth temperature of the cubic phase was also further lowered relative to the bulk thermodynamics by strain at the heterointerface, and once obtained, it was stable at temperatures of up to 800 ℃.The growth of SrMnO3 films on SrTiO3（111） substrates by pulsed laser deposition was studied and found to produce cubic and hexagonal （4H） structures in the SrMnO3 films. By adjusting the substrate temperature and oxygen pressure, the stability of the two phases was fine-tuned, resulting in the growth of cubic-SrMnO3（lll） or 4H-SrMn03（0001） film, with the 4H phase being the more stable at room temperature and ambient pressure in the bulk form. The growth temperature of the cubic phase was also further lowered relative to the bulk thermodynamics by strain at the heterointerface, and once obtained, it was stable at temperatures of up to 800 ℃.

关 键 词：oxide film pulsed laser deposition HETEROEPITAXY SrMn03 

分 类 号：O157.5[理学—数学] TN304.054[理学—基础数学]