聚合物薄膜晶体管制备条件对其性能影响分析  

Influence of fabrication process on performance of polymeric thin-film transistor

作　　者：谢应涛[1,2] 欧阳世宏[1,2] 王东平[1,2] 朱大龙[1,2] 许鑫[1,2] 方汉铿 

机构地区：[1]上海交通大学电子工程系,上海200240 [2]TFT-LCD关键材料及技术国家工程实验室,上海200240

出　　处：《液晶与显示》2015年第3期427-431,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：教育部新老师基金项目(No.20110073120018)

摘　　要：基于溶液法制备稠合噻吩-吡咯并吡咯二酮聚合物薄膜晶体管,比较不同制备环境下的薄膜晶体管的转移特征曲线。结果表明,旋涂环境对聚合物薄膜晶体管的影响可以忽略,但是退火环境对聚合物薄膜晶体管的影响至关重要,从饱和迁移率角度来看,在惰性环境下退火的器件的饱和迁移率是在空气中退火的器件的两倍多。无论退火温度是100°C低温情况还是190°C高温情况,上述结论均适用。这一结果表明退火环境对器件的影响至关重要。Based on soluble polymeric thin-film transistor,the characteristics of organic thin-film tran-sistors （OTFTs）with various fabrication processing conditions were compared.The results demon-strated that the characteristic of OTFTs isn？t almost influenced by spin-coating with air or N2 atmos-phere,yet it is seriously influenced by annealing with air or N2 atmosphere.From the point of field-effect mobility,it demonstrated that the mobility of OTFT devices with annealing in N2 atmosphere is more than two times as much as that with annealing in air,when the annealing temperature is the range from 100℃ to 190℃.

关 键 词：聚合物 有机薄膜晶体管 场效应迁移率 

分 类 号：TN321.5[电子电信—物理电子学]