基于量子模型的碳纳米管场效应晶体管电子输运特性  

Electron transport properties of carbon nanotube field effect transistor based on quantum model

作　　者：王小羊[1] 

机构地区：[1]泰州学院,江苏泰州225300

出　　处：《电子元件与材料》2015年第7期28-30,共3页Electronic Components And Materials

摘　　要：采用量子输运模型和NEGF理论,自洽求解薛定谔方程和泊松方程,对类MOS-碳纳米管场效应晶体管的电子输运特性建模。考察了沟道长度Lg为5-25 nm时,其对器件的导通电流、阈值电压、关态泄漏电流、电流开关比、亚阈值摆幅等性质的影响。结果表明：当Lg≥15 nm时,MOS-CNTFET没有量子尺寸效应;当Lg〈15 nm时,器件出现短沟道效应;Lg〈10 nm时短沟道效应更加明显。Using quantum transport model and NEGF theory, self consistent solving Schrodinger equation and Poisson equation, the model of the electronic transport characteristics of the class MOS-carbon nanotube field effect transistor were built. When the channel length Lg is 5-25 nm, the impact on the device＇s conduction current, threshold voltage, off leakage current, current switching ratio, and sub threshold amplitude were examined. The results show that： when the Lg is greater than or equal to 15 nm, MOS-CNTFET has no quantum size effect; when the Lg is less than 15 nm, the device appears short channel effect; when the Lg is less than 10 nm, short channel effect is more obvious.

关 键 词：碳纳米管 场效应晶体管 量子输运模型 电子输运特性 沟道长度 NEGF 

分 类 号：TB383[一般工业技术—材料科学与工程]