基于非等温能量平衡模型的GTR二次击穿特性研究  

Secondary breakdown of GTR based on the non-isothermal energy balance model

作　　者：周涛[1] 裴德礼 陆晓东[1] 吴元庆[1] 

机构地区：[1]渤海大学,辽宁锦州121000 [2]朝阳无线电元件有限责任公司,辽宁朝阳122000

出　　处：《电子元件与材料》2015年第7期73-77,共5页Electronic Components And Materials

基　　金：国家自然科学基金项目资助(No.11304020);辽宁省教育一般项目资助(No.L2012401)

摘　　要：基于非等温能量平衡传输模型,利用Silvaco-TCAD全面系统地分析了发射区半宽度(LE)、发射区边缘刻蚀结构以及浮空发射区结构对NPN型硅大功率晶体管(GTR)直流正偏二次击穿特性的影响。结果表明:当LE为130μm时,GTR直流正偏二次击穿临界点电压(VSB)最高。对于LE为150μm的GTR,当发射区边缘横向刻蚀距离为10μm时,对直流正偏二次击穿的改善效果最好。当浮空发射区与发射区边缘间距减小到17μm时,浮空发射区开始发挥改善直流正偏二次击穿特性的作用。Based on non-isothermal energy balance transfer model, the influences of emitter half width （LE）, edge-emitter＇s etched structures and floating-emitter structure on the high-power silicon NPN transistor （GTR） DC forward biased secondary breakdown were studied comprehensively and systematically by using Silvaco-TCAD. The results show that When LE is 130μm, GTR forward DC biased voltage secondary breakdown critical.point （VSB） is the highest. When the lateral etching distance of the emitter edge is 10 μm, LE of 150 μm in GTR can improve the DC biased secondary breakdown the best. When floating emitter and the emitter edge spacing is reduced to 17 μm, the floating emitter is beginning to improve the DC forward biased characteristics of second breakdown.

关 键 词：晶体管 二次击穿 发射区半宽度 浮空发射区 刻蚀 Silvaco 

分 类 号：TN303[电子电信—物理电子学]