直拉硅单晶中双空洞长大动力学的相场模拟  

Phase-field Simulation for the Growth Dynamics of Double Voids during Czochralski Silicon Crystal Growth

作　　者：关小军[1,2] 王进[1,2] 张向宇[1,2] 曾庆凯[3] 

机构地区：[1]山东大学材料科学与工程学院,济南250061 [2]山东大学晶体材料国家重点实验室,济南250100 [3]山东交通学院航空学院,济南250357

出　　处：《人工晶体学报》2015年第5期1207-1212,共6页Journal of Synthetic Crystals

基　　金：山东大学晶体材料国家重点实验室开放课题(KF1303)

摘　　要：为了研究硅单晶直拉法生长过程中双空洞的长大动力学以及空洞间的相互作用机理,采用已建立的空洞演化的相场模型及其应用程序,模拟研究了直拉硅单晶生长过程中双空洞演化和相关因素的影响规律。结果表明:所建相场模型能够有效地模拟基体中空位扩散和双空洞长大的过程;双空洞长大趋势随着模拟时间和初始空位浓度的增强而加强;随着空洞初始中心间距的增加和初始空位浓度的减小,双空洞长大由相互融合模式转变为独立长大模式。For investigating growth dynamics and interaction mechanisms, the evolution process of the double voids during Czochralski silicon growth were simulated by an established phase field model and the corresponding program code, as well as the influence laws of relevant factors were-studied. The results show that： the phase field model is capable to simulate the diffusion process of vacancies in the matrix and the growth process of double voids; with the increase of simulation time and initial vacancy concentration, the growing tendency of double between void centers and decrease of the initial voids enhances ; with the increase of the initial space vacancy concentration, the growth model changes from mutual integration to competitive growth.

关 键 词：硅单晶 直拉法生长 相场模拟 双空洞 长大动力学 

分 类 号：O77[理学—晶体学]