Mn离子注入Mg掺杂GaN的微结构和光学特性研究  

Microstructure and optical properties of Mg-doped GaN epilayers implanted with Mn ions

作　　者：徐大庆[1] 张义门[2] 李培咸[2] 娄永乐 刘树林[1] 童军[1] 

机构地区：[1]西安科技大学电气与控制工程学院,西安710054 [2]西安电子科技大学微电子学院宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《功能材料》2015年第14期14019-14022,共4页Journal of Functional Materials

基　　金：国防预研基金资助项目(9140A08040410DZ106);中央高校基本科研业务费专项资金资助项目(JY10000925005);陕西省教育厅专项科研计划资助项目(11JK0912);西安科技大学科研培育基金资助项目(2010011);西安科技大学博士启动资金资助项目(2010QDJ029)

摘　　要：通过Mn离子注入Mg掺杂GaN外延层制备了铁磁性GaN∶Mn薄膜,利用拉曼散射和光致发光谱研究了退火温度对薄膜微结构和光学特性的影响。拉曼谱测试显示由离子注入相关缺陷引起了新的声子模,分析认为Mn离子相关的局域振动(LVM)紧邻Ehigh2峰。光致发光谱观察到位于1.69,2.54和2.96eV的3个新的发光峰,分析认为2.96eV的发光峰来自MgGa-VN复合体深施主能级和Mg的浅受主能级之间的辐射复合跃迁,2.54eV的发光峰来自浅施主能级和深受主能级之间的辐射复合跃迁,对于位于1.69eV的新发光峰不排除来自MgGa-VN复合体深施主能级和Mn相关深受主能级之间辐射复合跃迁的贡献。Ferromagnetic GaN∶Mn thin films were prepared by implementing Mn ions into Mg-doped GaN epilayer.The implanted samples were examined with both Raman scattering and photoluminescence(PL)measurements to characterize their microstructure property.The Raman spectra exhibit additional excitations attributed to the vibrational mode of defects caused by Mn-ion implantation and the Mn related local vibrational mode in the vicinity of Ehigh2.The results of PL measurement show that new peaks at 1.69,2.54 and 2.96 eV emerge.The PL peak at 2.96 eV was attributed to a deep MgGa-VNcomplexes donor-shallow Mg acceptor transition,the PL peak at 2.54 eV was attributed to a shallow donor-deep acceptor transition,and the PL peak at 1.69 eV may be due to a transition between MgGa-VNcomplexes donor level and Mn acceptor level.

关 键 词：GAN 离子注入 拉曼散射 光致发光 

分 类 号：O48[理学—固体物理]