Al/AlO_x/Al隧道结简化制备技术  

Simplified fabrication on Al/AlO_x/Al tunnel junction

作　　者：张广涵[1] 曹春海[1] 翟计全[1] 姚晓栋[1] 李永超[1] 陈健[1] 康琳[1] 许伟伟[1] 吴培亨[1] 

机构地区：[1]南京大学超导电子研究所,南京210093

出　　处：《低温与超导》2015年第7期22-24,共3页Cryogenics and Superconductivity

基　　金：国家自然科学基金(61271081;61371036);国家重点基础研究发展计划项目(2012CBA00202)资助

摘　　要：研究了一种在高阻硅衬底上Al/Al Ox/Al超导隧道结简化制备技术。通过一次光刻镀膜完成隧道结结区的确定和上引线的制备,工艺流程简单重复。在0.3K温度下测量了隧道结样品的I-V特性,能隙电压Vg为0.37m V,超导临界电流密度约为12A/cm2。We studied a simplified technique of fabricating Al/AlOx/Al superconducting tunnel junctions on high resistivity silicon substrate. The definition of the junction area and fabrication of the top electrode could be completed by only one lithogra- phy, which was quite simple and repeatable. The junction I - V characteristic was measured at 0.3K, which showed that the en- ergy gap voltage was 0.37 mV and the superconducting critical current density was about 12 A/cm2.

关 键 词：Al/AlOx/Al 隧道结 制备工艺 

分 类 号：TN386[电子电信—物理电子学]