Mg膜厚度对Mg_2Si半导体薄膜结构及方块电阻的影响  

Effects of Thickness of Mg Film on the Crystal Structure and Sheet Resistance of Semiconductor Mg_2Si Films

作　　者：杨云良[1] 廖杨芳[1] 姚震震 肖清泉[1] 张宝晖 章竞予[1] 谢泉[1] 

机构地区：[1]贵州大学大数据与信息工程学院新型光电子材料与技术研究所,贵阳550025

出　　处：《半导体技术》2015年第7期525-530,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61264004);贵州省科技攻关资助项目(黔科合GY字[2011]3015);贵州省科技创新人才团队建设专项资金资助项目(黔科合人才团队[2011]4002);贵州省国际科技合作资助项目(黔科合外G字[2012]7004;[2013]7003);贵州省教育厅"125"重大科技专项资助项目(黔教合重大专项字[2012]003);贵阳市科技计划资助项目(筑科合同[2012101]2-16);贵州省自然科学基金资助项目(黔科合J字[2014]2052);贵州省青年英才培养工程资助项目(黔省专合字[2012]152);贵州省科技厅;贵州大学联合资金资助项目(黔科合LH字[2014]7610);贵州大学研究生创新基金资助项目(研理工2014004)

摘　　要：采用射频磁控溅射系统和热处理系统制备了Mg2Si半导体薄膜。首先在Si衬底上溅射不同厚度的Mg膜,然后在真空退火炉中进行低真空热处理4 h制备一系列Mg2Si半导体薄膜。采用台阶仪、X射线衍射仪(XRD)、扫描电子显微镜(SEM)对Mg2Si薄膜样品的结构、表面形貌、剖面进行表征,研究了Mg膜厚度对Mg2Si半导体薄膜生成的影响。结果表明,在Si衬底上制备出以Mg2Si(220)为主的单一相Mg2Si薄膜,且Mg2Si(220)的衍射峰强度随着Mg膜厚度的增加先增大后减小,Mg膜为2.52μm时,制备的Mg2Si薄膜表现出了良好的结晶度和平整度。最后,研究了Mg膜厚度对Mg2Si薄膜方块电阻的影响。Semiconductor Mg2 Si thin films were prepared by radio frequency magnetron sputtering system and heat treatment system. Mg films with different thicknesses were deposited on Si substrates by magnetron sputtering,and then a series of Mg2 Si semiconductor films with different thicknesses were prepared by low vacuum heat treatment for 4 h in a vacuum annealing furnace. The crystal structure,surface morphology and cross-section of the obtained Mg2 Si films were investigated by the surface profilometer,Xray diffraction（ XRD） and scanning electron microscopy（ SEM）. Effects of thicknesses of Mg films on the formation of semiconductor Mg2 Si films were investigated. The results show that the single-phase Mg2 Si films with the orientation of Mg2Si（ 220） are prepared successfully on Si substrates. Meanwhile,the diffraction peak intensity of Mg2Si（ 220） films first increases and then decreases with the increase of thickness of Mg film. Mg2 Si films show a good crystallinity and flatness when the thickness of Mg film is 2. 52 μm. Finally,the effect of Mg film thickness on the sheet resistance of Mg2 Si films were investigated.

关 键 词：磁控溅射 热处理 Mg2Si薄膜 薄膜厚度 方块电阻 

分 类 号：TN304.055[电子电信—物理电子学]