平面PN结InSb红外焦平面探测器的研究  

Study of In Sb IRFPA with planar PN junctions

作　　者：李忠贺[1] 李海燕[1] 杜红燕[1] 亢喆[1] 邱国臣 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2015年第7期814-816,共3页Laser & Infrared

摘　　要：研究了基于Be离子注入技术的平面型和Cd扩散技术的台面型锑化铟红外焦平面阵列(IRFPA)探测器芯片工艺流程。并进行了芯片I-V、成像结果等对比测试,Be离子注入平面型器件和扩散台面型芯片的性能水平相当,具备一定的工程应用水平。Technological processes of InSb infrared focal plane arrays（ IRFPA） detector chips with planar PN junctions based on Be ion implantation and mesa PN junctions based on Cd diffusion were studied in this paper. Comparison tests were carried out for I-V curve and imaging quality of two processes. Experimental results show that chip performances with planar PN junctions based on Be ion implantation are comparable with that with mesa PN junctions based on Cd diffusion,which provide a reference for engineering application.

关 键 词：锑化铟 离子注入 红外焦平面阵列探测器 平面结 

分 类 号：TN213[电子电信—物理电子学]