PI衬底柔性透明硅薄膜太阳能电池的制备及性能  

Fabrication and properties of flexible transparent amorphous silicon thin film solar cells on PI substrates

作　　者：李旺[1,2] 朱登华[3] 刘石勇[1] 刘路[1] 王仕鹏[1] 黄海燕[1] 牛新伟[1] 陆川[1] 杜国平[3] 

机构地区：[1]浙江正泰太阳能科技有限公司,浙江杭州310053 [2]浙江大学硅材料国家重点实验室,浙江杭州310027 [3]南昌大学材料科学与工程学院,江西南昌330031

出　　处：《电子元件与材料》2015年第8期34-37,共4页Electronic Components And Materials

基　　金：国家高技术研究发展计划资助(863计划)(No.2012AA052401);国家自然科学基金资助(No.61366004)

摘　　要：利用硬质玻璃为载板，采用传统硅薄膜太阳能电池生产设备，在聚酰亚胺（PI）塑料薄膜衬底上沉积了B掺杂的ZnO（BZO）薄膜，并以此作为前电极制备了单节电池结构及多节串联一体结构的非晶硅（a-Si）太阳能电池；研究了PI衬底上BZO薄膜的光学及电学性能。结果表明，PI衬底上沉积BZO薄膜后在300~1200 nm波长范围的透光率为76.63%，方块电阻19.7Ω/□。所制备的单节和多节串联一体结构的a-Si薄膜太阳能电池的转化效率分别达到6.45%和5.1%，封装后电池组件具有一定的透光性，透光率约达到30.2%。Transparent conductive B-doped ZnO （BZO） films were deposited on PI substrates which were carried by hard glass plates. Amorphous silicon （a-Si） thin film solar cells with single section and series-integrated monolithic structures were fabricated on these BZO films deposited on PI substrates using the traditional a-Si thin film solar cell production equipment. The optical and electrical properties of the BZO films on PI substrates were investigated. It is found that the average transmittance of BZO coated PI substrate is 76.63% in the wavelength range from 300 nm to 1 200 nm and its sheet resistance is 19.7 Ω/□. The initial conversion efficiencies of single section and series-integrated monolithic a-Si solar cell modules on PI substrates are found to be 6.45% and 5.1%, respectively, and their transmittances reach up to about 30.2%.

关 键 词：聚酰亚胺衬底 柔性透明 低压化学沉积 ZNO薄膜 非晶硅薄膜 柔性太阳能电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]