n-ZnO/p-GaAs异质结光电探测器光电特性研究  

Fabrication and the photoelectric properties of n-ZnO/p-GaAs thin-film heterojunction photodetectors

作　　者：张敏[1] 张立春[1] 董方营 李清山[1] 张忠俊 赵风周[1] 

机构地区：[1]鲁东大学物理与光电工程学院,山东烟台264025 [2]光驰科技(上海)有限公司薄膜开发部,上海200444

出　　处：《光电子．激光》2015年第7期1278-1283,共6页Journal of Optoelectronics·Laser

基　　金：山东省自然科学基金(ZR2014AM027);山东省高等学校科技计划(J14LJ04);鲁东大学科研基金(LY2014006)资助项目

摘　　要：利用脉冲激光沉积(PLD)技术在p-GaAs外延片上生长了n型ZnO薄膜,制备了n-ZnO薄膜/p-GaAs异质结光电探测器原型器件。X射线衍射(XRD)及扫描电子显微镜(SEM)测试结果表明,生长在GaAs表面上的ZnO薄膜具有较高的结晶质量。在反向偏压下,器件表现出良好的近红外探测性能,工作电压在-0.5V到-4.0V时,光谱响应度峰值在850nm附近;当反向电压为-2.0V时,光响应度达到饱和,响应度峰值达到10.17A/W。而比探测率峰值则在-2.0V达到最大值2.06×1010 cm Hz1/2/W,之后下降。反向工作电压下的光谱响应度和比探测率曲线表明,器件对850nm附近的近红外光具有较强的选择性(FWHM约为30nm)。High-quality n-ZnO thin films were deposited on the surface of p-GaAs epitaxial wafer by pulse laser deposition technology to construct the n-ZnO/p-GaAs heterojunction photodetectors. X-ray diffraction （XRD） and scanning electron microscope （SEM） results show that the ZnO thin films with high crystalline quahty on GaAs are obtained. Under reverse bias,the detectors exhibit good near-infrared detection performance. With the bias changing from -0. 5 V to -4 V,the spectral response curves indicate that all the responsivity peaks appear near 850 nm. And when the reverse bias is -2 V,the responsivity near 850 nm reaches the saturation value of 10.17 A/W. However,the specific detectivity reaches peak value of 2. 06 × 10^l0 cm Hz^1/2/W, and then decreases with the reverse bias increasing. The spectral response curves and the specific detectivity curves under reverse bias exhibit strong selectivity for the near-infrared fight in the vicinity of 850 nm （with FWHM of 30 nm）.

关 键 词：探测器 异质结 ZNO GAAS 响应度 

分 类 号：O472.8[理学—半导体物理]