低温溶液加工法制备氧化锌薄膜晶体管  

Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

作　　者：兰林锋[1] 宋威[1] 史文[1] 彭俊彪[1] 

机构地区：[1]华南理工大学发光材料与器件国家重点实验室,广东广州510640

出　　处：《华南理工大学学报（自然科学版）》2015年第3期98-102,共5页Journal of South China University of Technology(Natural Science Edition)

基　　金：国家"863"计划项目(2014AA032702);国家自然科学基金资助项目(61204087;51173049;61306099);广州市珠江科技新星项目(2014J2200053);华南理工大学中央高校基本科研业务费专项资金资助项目(2014ZM0003;2014ZZ0028)~~

摘　　要：为适应柔性有源有矩阵有机发光二极管(AMOLED)等新型显示技术发展的需要,将低温溶液处理的氧化锌作为半导体层、电化学氧化的氧化铝钕作为栅绝缘层,制备了氧化锌薄膜晶体管(TFT).制备氧化锌半导体层所用的前驱体溶液为无碳的Zn(OH)x-(NH3)y(2-x)+水溶液,这种氨络合物溶液制备简单、成本低,并且由于容易形成高活性的氢氧自由基,使得氨-金属之间的分解所需要的活化能较低,生成氧化锌所需的能量较小,可以在180℃的较低温度下获得氧化锌多晶薄膜.所制备的TFT器件的最高迁移率可达0.9 cm2/(V·s).这种低温氧化锌薄膜工艺与室温电化学氧化的栅绝缘层工艺相结合,具有温度低和迁移率高的特点,完全能与柔性衬底兼容,在柔性显示中具有很大的应用前景.In order to meet the requirements of novel display technologies such as flexible active-matrix organic light-emitting diodes（ AMOLED）,thin film transistors（ TFTs） are fabricated,with low-temperature solution-processed Zn O as the semiconductor layer and with electrochemical oxidized alumina neodymium as the gate dielectric layer. In the preparation of Zn O semiconductor layer,carbon-free aqueous Zn（ OH）x（ NH3）y（ 2-x） ＋solution with low cost and fabrication simplicity is employed,and,more importantly,the energy for metal-ammine dissociation and Zn O formation is rather low thanks to the highly activated hydroxyl radicals. As a result,Zn O polycrystalline films can be realized at a relatively low temperature,namely 180℃. The proposed low-temperature solution-processed Zn O fabrication method combining with room-temperature electrochemically-oxidized gate dielectric layer helps achieve high mobility up to 0. 9 cm2/（ V·s）,and is completely compatible with flexible substrates,so that it meets the demand of flexible electronic devices well.

关 键 词：薄膜晶体管 氧化锌 低温溶液加工 

分 类 号：TN141[电子电信—物理电子学]