4H-SiC的强氧化液化学机械抛光（英文）  

Chemical Mechanical Polishing of 4H-SiC with Strong Oxidizing Slurry

作　　者：梁庆瑞 胡小波[1] 陈秀芳[1] 徐现刚[1] 宗艳民 王希杰 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]山东天岳晶体材料有限公司,济南250111

出　　处：《人工晶体学报》2015年第7期1741-1747,共7页Journal of Synthetic Crystals

基　　金：National Basic Research Program of China(2011CB301904);Natural Science Foundation of China(11134006,51321091)

摘　　要：研究了一种新型的化学机械抛光方法,使用以KMnO 4作为氧化剂的强氧化性化学机械抛光液(SOAS)进行化学机械抛光。研究了在4H-SiC硅面和碳面的化学机械抛光过程中,SOAS溶液中KMnO 4的浓度对抛光质量的影响。使用原子力显微镜(AFM)和精密电子天平,分别测试了表面粗糙度和去除率。结果表明,适量的KMnO 4可以大幅度提高4H-SiC的化学机械抛光去除率,同时可提高4H-SiC衬底的表面抛光质量。A novel chemical mechanical planarization （CMP）technique was demonstrated using hybrid polishing liquid which was composed of strong oxidizer abrasive slurry （SOAS） with KMnO4. After double face polishing with different mass concentrations of KMn04, 4H-SiCsubstrates were assessed. Surface roughness and wafer removal rate were measured by atomic force microscopy （AFM） and precision scale, respectively. The results show that the SOAS with appropriate KMnO4 concentration can greatly raise the material removal rate （MRR） and improve the surface quality of 4H-SiCsubstrate.

关 键 词：碳化硅 化学机械抛光 高锰酸钾 粗糙度 去除率 

分 类 号：TN305.2[电子电信—物理电子学]