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机构地区:[1]华中光电技术研究所-武汉光电国家实验室,湖北武汉430223
出 处:《光学与光电技术》2015年第4期83-86,共4页Optics & Optoelectronic Technology
摘 要:采用长短波通膜系组合结构,对膜系光学性能进行了优化设计以及仿真分析。采用电子束蒸发,离子束辅助沉积工艺在Si基底两面分别沉积长短通膜。样品的透过率采用红外光谱仪测试,在3.7~4.2μm波段范围内平均透过率在80%以上,在3~3.6μm和4.3~5μm波段范围内截止,并将理论设计与实验结果进行了对比分析。样品通过了GJB2485—95规定的环境适应性测试。产品满足设计要求,具有工程化应用价值。In this paper, the combination structure of long-pass film stacks and short-pass film stacks are adopted, and the optical performance of film system is optimized, simulated and analyzed. Long-pass and short-pass films are deposited re- spectively on both sides of Si substrate by using electron beam evaporation and ion assisted deposition. The sample is investi- gated by FTIR spectrometer, which shows an average transmittance ratio is more than 80% at wavelength region 3.7--4.2 μm, and rejected at region 3μm-3.6 μm and 4.3 μm-5 μm. The designed and experimented results are contrasted and ana- lyzed. The sample passes the environment test according to GJB2485-95, which meets the requirement for the design and has application value for engineering.
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