动态应力对AlGaN/GaN HEMT性能的影响  

Effect of the Dynamic Stress on the Properties of the AlGaN/GaN HEMTs

作　　者：刘琨[1] 朱慧[1] 冯士维[1] 石磊[1] 张亚民[1] 郭春生[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《半导体技术》2015年第8期626-630,共5页Semiconductor Technology

基　　金：国家自然科学基金(61201046;61376077);北京市自然科学基金资助项目(4122005;4132022;2132023);高等学校博士学科点专项科研基金。资助项目(20121103120019);北京工业大学博士生创新基金资助项目(YB201404)

摘　　要：AlGaN/GaN高电子迁移率晶体管(HEMT)器件在实际应用过程中经常受到由于振动、热胀冷缩等原因引起的动态应力。为了研究动态应力对器件性能带来的影响,利用自主设计的应力机械装置对AlGaN/GaN HEMT芯片持续施加峰值大小为150 MPa,频率为3 Hz的交变应力。施加应力过程中,每隔一定的应力周期对器件进行电学特性测量,得到了不同应力周期下的输出特性曲线和转移特性曲线。研究分析了随着应力周期的增加输出电流和跨导的变化,研究结果表明,器件的输出电流和跨导随着施加动态应力周期的增加而减小。随着动态应力的加载,器件将产生缺陷,是器件发生退化的原因。The GaN/AlGaN high electron mobility transistors （HEMT） are often subjected to dy- namic stress in the practical application, due to the vibration, thermal expansion and contraction, etc. Such stress effect on the device performance was studied by the application of a dynamic stress on the AlGaN/GaNHEMT chip using a self-designed bending test rig applied 150 MPa and 3 Hz stress. The electrical properties were measured during the stressing process at the same interval of stress cycle. It is found that the output current Ids and the transconduetance decrease with the increase of the stress cycles. The reason is explained by the defects in the A1GaN layer. And that is the reason for the device degeneration.

关 键 词：AlGaN/GaN高电子迁移率晶体管(HEMT) 交变应力 电学特性 KINK效应 缺陷 

分 类 号：TN386[电子电信—物理电子学] TN304.23