Cascode型GaN HEMT输出伏安特性及其在单相逆变器中的应用研究  

Research on Output Volt-ampere Characteristics of Cascode GaN HEMT and Its Application in Single-phase Inverter

作　　者：李艳[1] 张雅静[1] 黄波[1] 郑琼林[1] 郭希铮[1] 

机构地区：[1]北京交通大学电气工程学院电力电子研究所,北京100044

出　　处：《电工技术学报》2015年第14期295-303,共9页Transactions of China Electrotechnical Society

基　　金：北京市科技计划课题资助项目(Z141100003114011)

摘　　要：近年来随着氮化镓器件制造工艺的迅速发展,氮化镓高电子迁移率晶体管(Ga N HEMT)已经开始应用在电力电子领域。高压共源共栅(Cascode)Ga N HEMT的出现使得Ga N器件可以在高压场合进行应用。本文首先研究了耗尽型Ga N HEMT及Cascode Ga N HEMT全范围输出伏安特性及其特点。结合Si MOSFET和耗尽型Ga N HEMT的特性,本文重点研究了Cascode Ga N HEMT的工作模态及其条件。最后,给出了500W基于600V Cascode Ga N HEMT单相全桥逆变器的实验验证。实验结果和仿真验证证明了理论分析的正确性。In recent years with the rapid development of the manufacturing process of Ga N devices, Gallium Nitride high electron mobility transistors（Ga N HEMT） has begun to be applied in the field of power electronics. The appearance of the Cascode Ga N HEMT makes it possible to apply Ga N device in high voltage application. The output volt-ampere characteristics of the depletion mode Ga N HEMT and Cascode Ga N HEMT are investigated in detail, which is important for the operation mode of the Cascode Ga N HEMT. This paper presents the steady-state operation mode for high voltage gallium nitride（Ga N） high-electron-mobility transistors（HEMT） in a Cascode structure. The steadystate analysis is verified by a 500 W single phase DC/AC inverter. Theoretical analysis is verified by simulation and experiment results.

关 键 词：宽禁带半导体器件 GAN HEMT 共源共栅结构 输出伏安特性 

分 类 号：TM464[电气工程—电器]