牺牲层二维腐蚀修正模型的研究  

Study of Amended 2-D Model of Sacrificial Layer Etching

作　　者：俞佳佳[1] 方玉明[1] 蒋文涛[1] 吉新村[1] 

机构地区：[1]南京邮电大学电子科学与工程学院,南京210003

出　　处：《传感技术学报》2015年第6期809-813,共5页Chinese Journal of Sensors and Actuators

基　　金：江苏省普通高校专业学位研究生科研实践计划项目(SJLX_0372);江苏省自然科学基金项目(BK20131380;BK20130880)

摘　　要：针对氢氟酸腐蚀氧化硅,深入研究了牺牲层腐蚀的原理。牺牲层腐蚀主要受扩散机制影响。把二维扩散方程中的扩散系数看作溶液浓度和温度的函数,建立了二维腐蚀修正模型。利用有限差分算法求解扩散方程,并使用C语言编程实现了对单开口、内外拐角等多种复杂组合结构腐蚀过程的模拟,使用MATLAB软件绘制腐蚀图形,最后将模拟结果与实验结果进行了对比,验证了模型的合理性。Aimed at silicon oxide etched by HF, deeply study is carried on on sacrificial layer etching. Sacrificial layer etching is affected mostly by the diffusion of etching solution. The paper regards the diffusion coefficient as a function of solution concentration and temperature, and constructs the amended 2-D etching model. The numerical algorithm of finite-difference method is given for the diffusion equation. The simulation program which can simulate different complex sacrificial structures including single open,inside comer and outside comer is implemented. Language C is used to simulate the etching process, and MATLAB is used to graphing. Through contrasting the simulation results and the experiment ones, the rationality of the model is verified.

关 键 词：牺牲层腐蚀 二维腐蚀模型 扩散系数 计算机模拟 

分 类 号：TN402[电子电信—微电子学与固体电子学]