应用于移动手机的SOI线性射频功率放大器的设计  

Design of linear RF power amplifier for moblie phones based on SOI technology

作　　者：林俊明[1] 郑耀华[1] 郑瑞青 章国豪 

机构地区：[1]广东工业大学,广东广州510006

出　　处：《电子技术应用》2015年第9期60-62,共3页Application of Electronic Technique

摘　　要：主要研究采用IBM公司SOI 0.18μm CMOS工艺设计应用于1.95 GHz WCDMA发射机的全集成线性功率放大器的设计方法。电路采用三级AB类放大器级联结构,模拟结果显示,在工作电压为2.5 V的情况下,CMOS射频功率放大器工作稳定,1 d B压缩点输出功率约为30 d Bm,增益约为28 d B,最大功率增加效率(PAE)约为42%。The main contents of this thesis is to research into the method of which designing a linear power amplifier ,which is fully integrated, applied to the 1.95 GHz WCDMA transmitter by adopting the 0.18 μm SOI CMOS process of IBM＇s research. The circuit structure consists of three class AB amplifier which are cascaded together. According to the simulation results, the CMOS RF power amplifier is unconditionally stable when the power supply voltage is 2.5 volts and the 1 dB compression output power is about 30 dBm with that the gain is about 28 dB. It also shows that the maximum power added efficiency（PAE） is about 42%.

关 键 词：WCDMA CMOS SOI 线性功率放大器 PAE 

分 类 号：TN432[电子电信—微电子学与固体电子学]