Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy  

作　　者：姜腾 许晟瑞 张进成 林志宇 蒋仁渊 郝跃 

机构地区：[1]Key Lab of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University

出　　处：《Chinese Physics Letters》2015年第8期173-176,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 61204006;the Fundamental Research Funds for the Central Universities under Grant No 7214570101;the National Key Science and Technology Special Project under Grant No 2008ZX01002-002

摘　　要：Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of the samples are characterized by atomic force microscopy. The full width at half maximum （FWHM） of the HVPE sample shows a W-shape and that of the MOVPE sample shows an M-shape plane with the degree of 0 in the high-resolution x-ray diffraction （HRXRD） results. The surface morphology attributes to this significant anisotropic. HRXRD reveals that there is a significant reduction in the FWHM, both on-axis and off-axis for HVPE GaN are compared with the MOVPE template. The decrease of the FWHM of E2 （high） Raman scat tering spectra further indicates the improvement of crystal quality after HVPE. By comparing the results of secondary- ion-mass spectroscope and photoluminescence spectrum of the samples grown by HVPE and MOVPE, we propose that C-involved defects are originally responsible for the yellow luminescence.Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of the samples are characterized by atomic force microscopy. The full width at half maximum （FWHM） of the HVPE sample shows a W-shape and that of the MOVPE sample shows an M-shape plane with the degree of 0 in the high-resolution x-ray diffraction （HRXRD） results. The surface morphology attributes to this significant anisotropic. HRXRD reveals that there is a significant reduction in the FWHM, both on-axis and off-axis for HVPE GaN are compared with the MOVPE template. The decrease of the FWHM of E2 （high） Raman scat tering spectra further indicates the improvement of crystal quality after HVPE. By comparing the results of secondary- ion-mass spectroscope and photoluminescence spectrum of the samples grown by HVPE and MOVPE, we propose that C-involved defects are originally responsible for the yellow luminescence.

关 键 词：MOVPE GAN Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy 

分 类 号：O484.1[理学—固体物理]