基于势阱近似的小尺寸MOSFETs反型层解析模型  

An Analytical Model for Small Size MOSFETs Inversion Layer Using Potential Well Approximation

作　　者：徐火希[1] 兰志高[1] 罗春娅[1,2] 

机构地区：[1]黄冈师范学院电子信息系,湖北黄州438000 [2]华中科技大学光电学院,武汉430074

出　　处：《固体电子学研究与进展》2015年第2期124-128,共5页Research & Progress of SSE

基　　金：湖北省自然科学基金资助项目(2011CDB165);黄冈师范学院科学研究基金资助项目(2012028803)

摘　　要：将垂直于栅氧化层/衬底界面方向的反型层电势分布规律近似为耗尽层的电势分布规律,采用WKB近似方法求解薛定谔方程,得到了量子机制下分析MOSFETs反型层的解析模型,进而对Al/SiO2/p-Si MOSFETs能级、子带电子密度和反型层质心进行了模拟计算,并将模拟结果与数值自洽结果进行了比较,模拟结果较好地与数值自洽结果相吻合。On condition that the potential distribution of inversion layer perpendicular to the oxide/substrate interface was considered to be similar to the potential distribution of depletion layer,Schrodinger equation could be solved by using WKB approximation method and then an analytical model including quantum mechanism for MOSFETs inversion layer was obtained.On the basis of this model,the energy level,the subband electron concentration and the inversion layer centroid for Al/SiO2/p-Si MOSFETs were calculated.By comparing the results,it is found that the results from this model are in coincidence with those from the numerical self-consistent method.

关 键 词：金属-氧化物-半导体场效应晶体管 反型层 量子效应 温策尔-克雷默-布里渊方法 解析模型 

分 类 号：TN386.1[电子电信—物理电子学]