用于数字相控阵雷达收发组件的0.7~4.0GHz SOI CMOS有源下混频器  

A 0.7~4.0GHz SOI CMOS Active Down-mixer for Digital Phased-array Radar T/R Module

作　　者：陈亮[1,2] 陈新宇[1,2] 张有涛[1,2,3] 杨磊[1,2] 

机构地区：[1]南京国博电子有限公司,南京210016 [2]南京电子器件研究所,南京210016 [3]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2015年第2期145-149,160,共6页Research & Progress of SSE

摘　　要：基于0.18μm SOI CMOS工艺设计了一款用于数字相控阵雷达的宽带有源下混频器。该混频器集成了射频、本振放大器、Gilbert混频电路、中频放大器以及ESD保护电路。该芯片可以直接差分输出,亦可经过片外balun合成单端信号后输出。射频和本振端口VSWR的测试结果在0.7~4.0GHz范围内均小于2,IF端口的VSWR测试结果在25 MHz^1GHz范围内小于2。当差分输出时,该混频器的功率转换增益为10dB,1dB压缩点输出功率为3.3dBm。电源电压为2.5V,静态电流为64mA,芯片面积仅为1.0mm×0.9mm。A broadband active down-mixer using 0.18μm SOI CMOS process for digital phased-array radar application was designed.A RF input amplifier,a LO amplifier,a Gilbert mixer and an IF amplifier were integrated in this chip,which was able to output differential signal directly and single-ended signal by an off-chip balun.The measurements show that the RF and LO input VSWRis below 2from 0.7GHz to 4.0GHz,while the IF output VSWRis below 2from 25 MHz to 1GHz.The power conversion gain is 10 dB and the output 1dB compression point is 3.3dBm when the chip is used for differential output.The supply voltage is 2.5Vand the DC current is 64 mA.The chip area is only 1.0mm×0.9mm.

关 键 词：绝缘体硅互补型金属氧化物半导体 有源混频器 宽带 

分 类 号：TN386[电子电信—物理电子学] TN773