25Gb／s单片集成电吸收调制分布反馈激光器  

25Gb/s Electroabsorption Modulator Monolithically Integrated with Distributed Feedback Laser

作　　者：周代兵[1] 边静[1] 安欣[1] 王宝军[1] 张瑞康[1] 赵玲娟[1] 吉晨[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《光学学报》2015年第A01期209-212,共4页Acta Optica Sinica

基　　金：国家863计划（2011AA010303,2012AA012203）、国家973计划（2011CB301702）、国家自然科学基金（61321063,6132010601）

摘　　要：采用选区外延生长应变InGaAsP／InGaAsP多量子阱有源层，制备出带宽为25Gb／s的单片集成电吸收调制分布反馈激光器。激光器区和调制器区的荧光光谱波长分别为1535rim和1497nm，偏调约为38rim。利用全息技术在激光器区制备光栅，集成器件激射在1549nm波长处，器件的阈值电流为18mA，在100mA直流电流下出光功率大于10mw。器件工作在单模状态，边模抑制比大于40dB，与单模光纤耦合后测得的静态消光比为23dB，器件的3dB响应带宽为16GHz。调制器偏压为-1．7V，峰峰值电压为3．5V，在25Gb／s非归零伪随机二进制码（2^15-1）调制下测得器件的背靠背眼图清晰张开，动态消光比大于5．7dB。器件具有低成本、高带宽的特点，是下一代光纤通信网络的理想光源。A 25 Gb/s InGaAsP/InGaAsP multi-quantum wells electro-absorption modulator monolithically integrated with distributed feedback laser is fabricated by selective area growth. The photoluminescence wavelength variation is 38 nm between the laser area wavelengthλPL of 1535 nm and modulator area wavelength λPL of 1497 nm. The grating is fabricated at the laser region by holographic lithograph technology. The threshold current of thip lasers is 18 mA and the power is over 10 mW at 100 mA with wavelength of 1549 nm. The side-mode suppression ratio is over 40 dB. Extinction ratio is 23 dB by coupling light into the single mode fiber. The 3 dB-bandwidth of 16 GHz has been measured. A 25 Gb/s eye diagram is measured with a 3.5 V non-return to zero （NRZ） pseudorandorn modulation signal at -- 1.9 V bias. A clearly opening eye-diagram with a dynamic extinction ratio of 5.7 dB has been obtained. This laser is appropriate for next generation of optical fiber transmission systems for its high bandwidth and low cost.

关 键 词：激光器 分布反馈激光器 电吸收调制器 选择区域生长 

分 类 号：O436[机械工程—光学工程]