提高含硅纳米晶LED亮度的方法研究  

Research on the luminescence enhancement of silicon nanocrystal light-emitting devices

作　　者：陈家荣[1] 张羽[1] 

机构地区：[1]贵州民族大学信息工程学院,贵州贵阳550001

出　　处：《真空》2015年第5期43-46,共4页Vacuum

摘　　要：阻碍硅纳米晶LED器件在光电集成电路中的广泛应用的关键问题在于硅纳米晶电致发光强度较低。本文主要采用真空反应蒸发法和高温相分离方法来制备硅纳米晶样品,然后研究改变Si-nc浓度、改变衬底材料的电阻率、降低Si-nc与不同基体(SiO2、Si3N4)之间的界面势垒、场效应、电致表面等离子体等方法对硅纳米晶电致发光强度的影响。Si-based light emission is of critical importance for Si optoelectronics. However, practical Si light sources, whether photo-excited or LED-like （light-emitting device）, are still unavailable even after years of studies. One of the bottleneck problems lies in low light emission of Si-nc LED. In this work, firstly, a discussion on the vacuum reactive evaporation and high temperature phase separation technology of Si-nc preparation was taken. Secondly, EL spectra as functions of Si-nc concentration, EL intensities of Si-nc embedded in different substrate matrix, field-effcet approach and electro-excited surface plasmons were discussed.

关 键 词：硅纳米晶 电致表面等离子体场效应 界面效应 

分 类 号：TB79[一般工业技术—真空技术]