4H-SiC结势垒肖特基二极管VRSM特性研究  

Investigation on VRSM Characteristics of 4H-SiC Junction Barrier Schottky Diode

作　　者：顾春德 刘斯扬[1] 马荣晶 孙伟锋[1] 黄润华[2] 陶永洪[2] 刘奥[2] 汪玲[2] 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,南京210096 [2]中国电子科技集团公司第五十五研究所,南京210016

出　　处：《电子器件》2015年第4期725-729,共5页Chinese Journal of Electron Devices

基　　金：港澳台科技合作专项项目(2014DFH10190);江苏省青蓝工程项目;东南大学研究生科研基金项目(YBPY1403)

摘　　要：通过器件模拟仿真软件Sentauras和高分辨率透射电子显微镜HRTEM(High-Resolution Transmission Electron Microscopy)研究了4H-SiC结势垒肖特基二极管JBS(Junction Barrier Schottky)在反向浪涌电压应力作用下的失效机理;进而重点研究了结终端扩展区JTE(Junction Termination Extension)的长度、深度和掺杂浓度对该器件反向浪涌峰值电压VRSM(Maximum Surge Peak Reverse Voltage)的影响,并结合JBS的基本结构对其进行优化设计;最后,流片测试显示优化设计的4H-SiC结势垒肖特基二极管的VRSM值约为1450V,比原器件提升了20%左右。The failure mechanism of 4H-SiC Junction Barrier Schottky（ JBS） diode under surge reverse stress has been investigated by device simulators Sentauras and high-resolution transmission electron microscopy（ HRTEM）. Moreover,the influences upon the maximum surge peak reverse voltage（ VRSM） from the depth,length and doping concentration of the junction termination extension（ JTE） region in the 4H-SiC JBS diode have been also studied,after that,the optimization design of the device is carried out. Finally,the measurement result shows that,the VRSM of the optimized 4H-SiC JBS diode has achieved at 1450 V,which is increased by about 20% comparing with the original one.

关 键 词：4H-SIC 结势垒肖特基二极管 反向浪涌峰值电压 优化 

分 类 号：TN311[电子电信—物理电子学]