原子层沉积低温制备AZO薄膜  

A study on low-temperature growth of AZO thin films by atomic layer deposition

作　　者：唐立丹[1] 梅海林 冯嘉恒[1] 王冰[1] 

机构地区：[1]辽宁工业大学材料科学与工程学院,辽宁锦州121001

出　　处：《功能材料》2015年第18期18100-18104,共5页Journal of Functional Materials

基　　金：国家教育部重点资助项目(2012031);辽宁省自然科学基金资助项目(201204916);辽宁省人才基金资助项目(LJQ2013068);辽宁省教育厅创新团队资助项目(LT2013014)

摘　　要：采用原子层沉积技术与改进的Al掺杂模式在石英玻璃基体上低温制备AZO薄膜,利用椭圆偏振仪、原子力显微镜、X射线衍射仪、X射线光电子能谱仪、Hall效应测试仪系统地对样品的生长速率、表面形貌、晶体结构、薄膜成分与电学性能进行了表征和分析。结果表明,采用原子层沉积在150℃下制备AZO薄膜,其为六方纤锌矿结构,Al掺杂对Zn O的(002)有明显的抑制作用,Al在基体中弥散分布,其部分替换Zn O晶格中的Zn,以Al—O的形式存在于晶体中,晶体中存在大量的氧空位,最佳铝锌循环比为1∶19,此条件下AZO薄膜电阻率为4.61×10-4Ω·cm。Al-doped zinc oxide( AZO) films were prepared on quartz glass substrates by atomic layer deposition at 150℃ with improved Al-doped model. The growth rate was illustrated by spectroscopic ellipsometer. And surface morphology,crystal structure,films composition and electric properties were characterized by atomic force microscopy,X-ray diffraction,X-ray photoelectron spectroscopy and Hall measurement,respectively. The results showed that all of AZO films with hexagonal wurtzite structure were continuous and homogeneous on the substrate surface. The intensity of Zn O( 002)crystal plane diffraction peak reduced with increasing Al atom doping content. Al was substituted for Zn in lattice position uniformly distributes and disperses in Zn O crystal structure by the mode of Al-O coalition,the O vacancies exist in the crystal. The lowest resistivity of 4. 61 × 10- 4Ω·cm were obtained in AZO films when Al and Zn circulating ratio was 1

关 键 词：Al掺杂ZnO 原子层沉积 低温生长 晶态薄膜 

分 类 号：TQ174[化学工程—陶瓷工业]