光学浮区法生长掺锡氧化镓单晶及性能研究  

Growth and Properties of Sn∶β-Ga_2O_3 Single Crystal by Optical Floating Zone Method

作　　者：张小桃[1,2] 谢建军[1] 夏长泰[2] 张晓欣[1] 肖海林[2] 赛青林[2] 户慧玲 

机构地区：[1]上海大学材料科学与工程学院,上海200444 [2]中国科学院上海光学精密机械研究所,上海201800

出　　处：《人工晶体学报》2015年第9期2354-2358,共5页Journal of Synthetic Crystals

基　　金：上海市科研计划能力建设项目(14520500300);上海市科委科技攻关(13111103700)

摘　　要：作为垂直结构的Ga N基LED新型衬底材料,β-Ga2O3单晶已经引起了人们的广泛关注。β-Ga2O3单晶的导电性是通过掺杂来实现的,Sn4+掺入是其中一种很好提高β-Ga2O3导电性的方法。利用光学浮区法生长了尺寸为5×20 mm2,掺杂浓度为10%的掺锡氧化镓单晶(Sn∶β-Ga2O3),并对Sn∶β-Ga2O3单晶的缺陷密度、导电和荧光光谱特性进行了研究。结果表明:实验制得Sn∶β-Ga2O3样品的线缺陷约为6.51×105/cm2,掺入Sn4+杂质后β-Ga2O3的电导率增加,样品的最高电导率为2.210 S/cm,同时Sn4+的掺入会抑制β-Ga2O3的红绿光发射。As a new substrate material of vertical structure Ga N-based LED,β-Ga2O3 single crystal attracts wide attention. The conductivity of β-Ga2O3 is achieved by doping. Doping Sn^4 ＋is a good method to improve conductivity of β-Ga2O3 single crystal. 10% Sn∶ β-Ga2O3 single crystal with 5 × 20mm^2 size was grown by the floating zone technique. The defect density,conductive properties and fluorescence emission spectra were investigated as well. The results show that defect density of Sn ∶ β-Ga2O3 is 6. 51 × 10^5/ cm^2 and the conductivity of Sn∶ β-Ga2O3 single crystal can be obviously raised to 2.210 S / cm with the introduction of Sn^4 ＋. The green and red emission of Sn doped β-Ga2O3 single crystal are inhibited.

关 键 词：Sn∶β-Ga2O3 浮区法 电导率 荧光光谱 

分 类 号：O78[理学—晶体学]