用于多结叠层太阳电池的GaInAsN材料研究进展  

Research progress of GaInAsN materials for multi-junction tandem solar cells

作　　者：张启明[1] 张恒[1] 刘如彬[1] 唐悦[1] 孙强[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300384

出　　处：《电源技术》2015年第10期2321-2324,共4页Chinese Journal of Power Sources

摘　　要：1.0eV的GaInAsN材料是实现与Ge或GaAs衬底晶格匹配的高效多结叠层太阳电池的理想材料。但是,目前制备高质量的GaInAsN材料较为困难,使得相应电池性能低下,未能达到预想的效果。介绍了几种生长GaInAsN材料的外延工艺,探讨了各种外延方法导致材料生长困难的原因和相应的改进工艺,并在总结了GaInAsN太阳电池研究现状的基础上对其未来发展趋势进行了展望。1.0 eV GaInAsN was an ideal material for making Ge or GaAs based lattice-matched high-efficiency multi-junction tandem solar cells. However, it was so far difficult to obtain high-quality GaInAsN materials, leading to the inefficiency performance of the solar cells. Several epitaxy methods of GaInAsN were reviewed and the reasons for the difficulties in the growth of GaInAsN and the relevant resolvents which could improve the material quality were discussed. Finally, the future direction was propected on the basis of the overview of the development status of GaInAsN solar cells.

关 键 词：GA In As N 多节叠层太阳电池 金属有机气相沉积 分子束外延 化学束外延 

分 类 号：TM914[电气工程—电力电子与电力传动]