Nd:YAG激光声光调Q频率对Si太阳能电池划片的电性能影响  

Effect of Q-switched Nd: YAG Laser Pulse Frequency on Electrical Properties of Si Solar Cell Scribing

作　　者：苏蓓蓓[1] 

机构地区：[1]无锡科技职业学院,江苏无锡214028

出　　处：《大学物理实验》2015年第5期7-10,共4页Physical Experiment of College

摘　　要：利用YAG-50型声光调Q激光划片机对156*156*0.18mm的多晶硅太阳能电池片进行划片实验,得到了不同调Q频率和电池片电性能参数的关系,从而找出了Q开关的最佳频率范围值,并从理论上探讨分析了不同调Q频率范围划片得到的太阳能电池片电性能参数差异的原因。Laser scribing too deep or too shallow will affect the electrical parameters of solar cell. Laser scri- bing of polycrystalline silicon solar cells in the size of 156 ＊ 156 ＊ 0.18ram with a acousto--optical Q-switched Nd：YAG laser was studied in this paper and the relationship between repetition frequency and groove depth and width has been obtained. The best repetition frequency range has been found and the influence of the repe- tition frequency to the electrical parameters of solar＇ cell was also analyzed theoretically.

关 键 词：调Q频率 激光划片 开路电压 短路电流 填充因子 

分 类 号：O4-34[理学—物理]